Model/Brand/Package
Category/Description
Inventory
Price
Data
-
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 28A 100000mW 3Pin(2+Tab) D2PAK T/R899610+$9.5472100+$9.0698500+$8.75161000+$8.73572000+$8.67205000+$8.59257500+$8.528810000+$8.4970 -
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 12A Automotive 3Pin(2+Tab) DPAK T/R773510+$8.5668100+$8.1385500+$7.85291000+$7.83862000+$7.78155000+$7.71017500+$7.653010000+$7.6245 -
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 14A 49000mW 3Pin(2+Tab) D2PAK T/R34775+$15.059150+$14.4155200+$14.0551500+$13.96501000+$13.87492500+$13.77205000+$13.70767500+$13.6433 -
![]()
Category: IGBTtransistorDescription: 600V ，600V Switching Power Supply Series N-channel IGBT, SMPS Series N-channel IGBT6041 -
![]()
Category: IGBTtransistorDescription: IGBT Discrete, Fairchild Semiconductor IGBT discrete components and modules, Fairchild Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.49155+$15.501350+$14.8389200+$14.4679500+$14.37521000+$14.28242500+$14.17645000+$14.11027500+$14.0439 -
![]()
Category: IGBTtransistorDescription: IGBT The Infineon * * distributed IGBT series offers different technologies such as NPT, N-channel TRENCHSTOPTM, and Fieldstop. They can be used for many applications that may require hard switching and soft switching. This includes industrial drives UPS、 Inverters, household appliances, and induction cooking. Some devices may have anti parallel diodes or integral integrated diodes. ###IGBT discrete components and modules, Infineon insulated gate bipolar transistor or IGBT, are three terminal power semiconductor devices known for their high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.234810+$10.7184100+$10.1825500+$9.82521000+$9.80732000+$9.73595000+$9.64667500+$9.575110000+$9.5394 -
![]()
Category: IGBTtransistorDescription: NChannel 10A -600V - TO -220/TO -220FP/D2PAK PowerMESH TM IGBT N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT60051+$60.193310+$57.5762100+$57.1051250+$56.7387500+$56.16301000+$55.90132500+$55.53495000+$55.2208 -
![]()
Category: IGBTtransistorDescription: MCU 16Bit XE166 CISC/DSP/RISC 192KB Flash 3.3V/5V 100Pin LQFP EP51991+$60.491310+$57.0205100+$54.4421250+$54.0455500+$53.64881000+$53.20262500+$52.80595000+$52.5580 -
![]()
Category: IGBTtransistorDescription: Control integrated power system25131+$114.065110+$109.1057100+$108.2130250+$107.5187500+$106.42771000+$105.93172500+$105.23745000+$104.6423 -
![]()
Category: IGBTtransistorDescription: RC-Drive and RC Drive Fast588410+$6.5688100+$6.2404500+$6.02141000+$6.01052000+$5.96675000+$5.91197500+$5.868110000+$5.8462 -
![]()
Category: IGBTtransistorDescription: N-Channel 440 V 20 A surface mount internal clamp PowerMESH IGBT - D2PAK96415+$3.439825+$3.185050+$3.0066100+$2.9302500+$2.87922500+$2.81555000+$2.790110000+$2.7518 -
![]()
Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.21025+$13.857550+$13.2653200+$12.9336500+$12.85071000+$12.76782500+$12.67315000+$12.61397500+$12.5546 -
![]()
Category: IGBTtransistorDescription: Door driver DUAL 5V MOSFET DRIVE26795+$3.636925+$3.367550+$3.1789100+$3.0981500+$3.04422500+$2.97695000+$2.949910000+$2.9095 -
![]()
Category: IGBTtransistorDescription: 600V ，Switching Power Supply Series N-channel IGBT 600V, SMPS Series N-channel IGBT3765 -
![]()
Category: IGBTtransistorDescription: Fast IGBT in NPT technology99325+$14.394550+$13.7794200+$13.4349500+$13.34881000+$13.26262500+$13.16425000+$13.10277500+$13.0412 -
![]()
Category: IGBTtransistorDescription: IGBT The Infineon * * distributed IGBT series offers different technologies such as NPT, N-channel TRENCHSTOPTM, and Fieldstop. They can be used for many applications that may require hard switching and soft switching. This includes industrial drives UPS、 Inverters, household appliances, and induction cooking. Some devices may have anti parallel diodes or integral integrated diodes. ###IGBT discrete components and modules, Infineon insulated gate bipolar transistor or IGBT, are three terminal power semiconductor devices known for their high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.408210+$6.2964100+$5.9816500+$5.77171000+$5.76122000+$5.71925000+$5.66687500+$5.624810000+$5.6038 -
![]()
Category: IGBTtransistorDescription: INFINEON IGB10N60T Single transistor, IGBT, 10A, 2.05V, 110W, 600V, TO-263, 3-pin808110+$9.9852100+$9.4859500+$9.15311000+$9.13652000+$9.06995000+$8.98677500+$8.920110000+$8.8868 -
![]()
Category: IGBTtransistorDescription: 75% reduction in Eoff compared to previous generation Fast IGBT in NPT technology 75% lower Eoff compared to previous generation8021 -
![]()
Category: IGBTtransistorDescription: The fast IGBT in NPT technology has a soft and fast recovery anti parallel diode EMCON Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode8762 -
![]()
Category: IGBTtransistorDescription: IGBTTube/Module IGB20N60H3 TO-263-354275+$17.991150+$17.2222200+$16.7917500+$16.68401000+$16.57642500+$16.45345000+$16.37657500+$16.2996 -
![]()
Category: IGBTtransistorDescription: IGBTTrench field termination and technology, soft, fast recovery anti parallel EMCON and diode IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode43725+$13.587250+$13.0066200+$12.6814500+$12.60011000+$12.51882500+$12.42595000+$12.36787500+$12.3098 -
![]()
Category: IGBTtransistorDescription: Igbt 1200V 32A 125W Smpd89581+$62.026410+$59.3296100+$58.8442250+$58.4666500+$57.87331000+$57.60362500+$57.22615000+$56.9025 -
![]()
Category: IGBTtransistorDescription: IGBTTrench field termination and technology, soft, fast recovery anti parallel EMCON and diode IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode64225+$16.375350+$15.6755200+$15.2836500+$15.18571000+$15.08772500+$14.97575000+$14.90577500+$14.8358 -
![]()
Category: IGBTtransistorDescription: Igbt Phaseleg 1200V 30A Smpd99141+$124.504810+$121.256850+$118.7667100+$117.9006200+$117.2510500+$116.38491000+$115.84362000+$115.3022 -
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 47A 3Pin(2+Tab) D2PAK T/R79155+$17.057450+$16.3285200+$15.9203500+$15.81821000+$15.71622500+$15.59955000+$15.52667500+$15.4537 -
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 350V 21A 150000mW 3Pin(2+Tab) DPAK T/R46785+$17.465850+$16.7194200+$16.3014500+$16.19691000+$16.09242500+$15.97305000+$15.89837500+$15.8237 -
![]()
Category: IGBTtransistorDescription: IGBT，Fairchild Semiconductor These * * EcoSPARK2 * * IGBT devices have been optimized and can be used to drive car ignition coils. They have undergone stress testing and comply with the AEC-Q101 standard. Logic level gate driven ESD protection applications: automotive ignition coil driver circuits, coil spark plug applications. **RS Product Code: * * 864-8802 FGB3040CS 400V 20A D2PAK 864-8805 FGB3040G2_F085 400V 25A DPAK-2 807-0767 FGD3040G2_F085 400V 25A DPAK 807-0776 FGD3440G2_F085 400V 25A DPAK 864-8818 FGB3440G2_F085 400V 25A D2PAK-2 864-8893 FGP3440G2_F085 400V 25A TO220 864-8880 FGI3040G2_F085 400V 25A I2PAK 864-8899 FGP3040G2_F085 400V 25A TO220 864-8827 FGD3245G2_F085 450V 23A DPAK 864-8809 FGB3245G2_F085 450V 23A D2PAK-2 ### The current rating mentioned is applicable when the contact temperature Tc is+110 ° C. ###Standard AEC-Q101 # # IGBT discrete components and modules, Fairchild Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.31495+$22.815050+$21.8400200+$21.2940500+$21.15751000+$21.02102500+$20.86505000+$20.76757500+$20.6700 -
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 650V 20A 150000mW 3Pin(2+Tab) D2PAK T/R957210+$11.2428100+$10.6807500+$10.30591000+$10.28722000+$10.21225000+$10.11857500+$10.043610000+$10.0061 -
![]()
Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 31A 3Pin(2+Tab) D2PAK T/R80915+$16.556750+$15.8491200+$15.4529500+$15.35381000+$15.25482500+$15.14165000+$15.07087500+$15.0001
